Renesas unveils first 650V GaN in dual-side-cooled 8mm x 8mm package for megawatt-scale AI data centers. Renesas Electronics ...

Polytechnique Fédérale de Lausanne (EPFL) in Switzerland has reported on the benefits of intrinsic polarization ...

Latest issue of Semiconductor Today now available. For coverage of all the key business and technology developments in compound semiconductors and advanced sili ...

As the SiC devices industry pushes toward higher voltages and larger die sizes, material-level quality and wafer consistency have become critical differentiators, says Wolfspeed. The firm adds that ...

Silicon photonics and InP photonic integrated circuit market to grow to $48bn by 2036. Photonic integrated circuits (PICs) ...

Eaton to use Infineon’s silicon carbide power devices in medium-voltage solid-state transformer for 800V data-center power distribution ...

Fraunhofer IAF develops broadband distributed amplifier MMIC for data centers, measurement systems and sensors ...

Gallium nitride (GaN) and silicon carbide (SiC) power semiconductor firm Navitas Semiconductor Corp of Torrance, CA, USA has been awarded the ALATTIS (Accelerated, Large-Area, 10kV SiC IGBT) program ...

Toshiba launches 3300V SiC MOSFET module. Toshiba Electronic Devices & Storage Corp (TDSC) of Kawasaki, Japan has launched ...

Starlab secures payload reservation from Elethron. Starlab Space LLC of Webster, TX, USA — which is developing an AI-enabled commercial space st ...

The Arkansas Research Institute for Electronics Systems (ARIES) has been launched, with the aim to develop, produce and deploy next-generation power electronics, microelectronics and semiconductors ...