IEEE

A Comprehensive Physics-Based Compact Model for CNT Thin Film Transistors—Part I: Schottky Contact

Abstract: We present a transistor model to describe the field effect current/voltage (${I}/{V}$ ) relationship in single-wall carbon nanotube thin film transistors (CNT TFTs). Based on the nature of ...
IEEE

Reducing Transistor Count in CMOS Logic Design Through Clustering and Library-Independent Multiple-Output Logic Synthesis

Abstract: We propose a novel transistor-level synthesis method to minimize the number of transistors needed to implement a digital circuit. In contrast with traditional standard cell design methods or ...
Indiatimes

IISc team reshapes GaN transistors to power next wave of EVs & data centres

Mayank Shrivastava (third from right) holding a representative power device 8” wafer, with some of his PhD students who work on various aspects of GaN Power and RF technology (Photo credit: IISc) ...