Abstract: The silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) has a more serious voltage overshoot than the silicon insulated gate bipolar transistor (IGBT) due to the ...
Abstract: The traditional neutral voltage problem in low-voltage (LV) four-wire multigrounded distribution networks can be aggravated due to an unbalanced allocation of one-phase photovoltaic (PV) ...
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