The research work aims to use the superior properties of wide bandgap (WBG) semiconductors, SIC and GaN, by proposing and ...

A new R&D development designed to support the growth of semiconductor packaging has received a £9 million funding injection, ...

EPC continues to benefit from a ruling by the US ITC a couple of months ago, which previously confirmed that Innoscience ...

Nexperia has introduced a range of industrial grade 1200 V SiC MOSFETs in surface-mount (SMD) top-side cooled packaging ...

Taiwan Semiconductor (TSC) has expanded its PerFET family of power MOSFETs with the addition of 80V and 100V versions. Based ...

GaN specialist Efficient Power Conversion (EPC) has introduced the EPC2367, a next-generation 100 V eGaN FET for power ...

NoMIS Power says its long SCWT devices are well-screened for latent defects and offer easier gate driver desaturation (dSat) ...

Researchers from the National Renewable Energy Laboratory (NREL), the Colorado School of Mines, and Oak Ridge National ...

With more than six billion units sold around the world, TinySwitch ICs are widely used in bias and auxiliary supplies in ...

Texas Instruments (TI) has announced new power chips to support the rapidly growing power needs of modern data centres, which ...

Navitas Semiconductor has announced what it believes are the world’s first production-released 650 V bi-directional GaNFast ...

Infineon has expanded its CoolSiC Schottky diode 2000V G5 product family to include a Schottky diode in the TO-247-2 package, ...