AI optical connectivity company PicoJool has raised $27.5m in Series A funding led by Socratic Partners, with participation from Hudson River Trading (HRT). The financing follows a $12mseed round led ...

Drawing on decades of sealing expertise, Greene Tweed is helping fabs to reduce their environmental impact without having to compromise performance, reliability, or yield.

Mini-Circuits will exhibit at European Microwave Week 2026 in London, United Kingdom. From October 6–8 at ExCeL London, visitors can meet Mini-Circuits’ product experts and discover new technologies ...

Photonics and wireless specialist Sivers Semiconductors has made a series of leadership changes as the company moves into its next phase of commercial growth.

Toshiba Electronic Devices has launched a dual SiC MOSFET module for industrial equipment, including railway vehicles, renewable energy power generation systems and power conversion systems. The 3300V ...

MBE firm Riber has posted its results for the first half of 2026 with recorded revenue growth and improved earnings. The company is also continuing to implement its strategic roadmap, having secured ...

By combining controlled thickness with low defect density and industrial compatibility, Smart-Cut technology is creating high-quality SiC-on-insulator substrates that are opening the door to practical ...

To meet stringent brightness and divergence requirements, our company, Vertilite, has developed and then ramped production of the anti-reflective VCSEL (AR VCSEL). A key feature of our novel laser is ...

Whereas conventional LEDs become dimmer the smaller the crystals are cut, organic light-emitting materials can be used to produce tiny yet bright pixels. Until now, the organic light-emitting ...

There are mainly three technologies for gallium oxide epitaxy: HVPE, MBE, and MOCVD. Our partners in the USA and Japan are more famous for MBE and HVPE. Some suppliers in China are also exploring ...

Next-generation wireless communication systems will benefit from heterogeneous monolithic integration of InGaAs HEMTs and GaN HEMTs on silicon CMOS chips.