Abstract: In this article, a novel active impedance matching circuit with a single transistor is studied for antennas to cover over a hundred-octave bandwidth. In the proposed matching circuit, only ...
Mayank Shrivastava (third from right) holding a representative power device 8” wafer, with some of his PhD students who work on various aspects of GaN Power and RF technology (Photo credit: IISc) ...
Abstract: In this paper, the carrier trapping behavior and electrical characteristics of AlGaN/GaN high electron mobility transistors (HEMTs) under different bias conditions are studied based on the ...
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