Most lab testing quietly inflates 2D transistor performance, research reveals

For nearly two decades, two-dimensional (2D) semiconductors have been studied as a complement or possible successor to silicon transistors, promising smaller, faster and more energy-efficient ...
IEEE

Microwave Intermediate Frequency Equivalent Circuit of GaAs High Electron Mobility Field Effect Transistor Terahertz Detectors

Abstract: Field effect transistor (FET) based terahertz rectifiers are promising candidates for sensitive, room-temperature operated high speed (THz) detectors, e.g. in communication, medical, ...
IEEE

Accurate Sub-circuit Model of LDMOS Transistor with Drift Region Emphasis

Abstract: In this work, we proposed a high-precision sub-circuit model on drift region to capture electrical characteristics of a lateral double-diffused MOSFET (LDMOS). The novel sub-circuit model ...