EPC Highlights Gen 7 GaN for AI Infrastructure and GaN Integrated Circuits for Robotics at APEC 2026

Enabling scalable power for AI computing and next-generation robotics Our new GaN integrated circuits enable more ...
IEEE

Study of Trap Influence on Threshold Voltage of SiC MOSFET Based on Transient Current Method

Abstract: The threshold voltage shift issue caused by traps in silicon carbide metal-oxide-semiconductor field-effect transistors (SiC MOSFETs) is studied based on transient current method. Experiment ...
IEEE

Temperature Scaling and C–V Modeling of SiC Low-Voltage MOSFETs for IC Design

Abstract: A high-temperature (HT) SPICE model of the silicon carbide (SiC) nMOS and pMOS along with the transient characteristics is presented in this article. This work extends the BSIM4SiC model, ...
circuitdigest.com

Reverse Polarity Protection Circuit Using P-Channel MOSFET

You’ve just finished assembling an electronic project and are ready to power it up, only to realize the battery might be connected backwards. In an instant, a simple mistake can destroy hours of work.

Navitas Unveils 5th Generation SiC Trench-Assisted Planar (TAP) Technology

The 5 th generation MOSFET platform features Navitas’ most compact TAP architecture yet, combining the ruggedness of a planar gate with best-in-class performance figures of merit enabled by a trench ...