Abstract: This paper presents a detailed comparison between monolithically integrated Bi-Directional MOSFETs (BiD-MOSFETs) and Bi-Directional JBSFETs (BiD-JBSFETs). By utilizing the latest generation ...
Abstract: Paralleling the silicon carbide (SiC) MOSFETs is necessary to increase the current rating in high-power applications. Moreover, the discrete device with TO-247 package features low-cost, ...
5d
EPC Highlights Gen 7 GaN for AI Infrastructure and GaN Integrated Circuits for Robotics at APEC 2026
Enabling scalable power for AI computing and next-generation robotics Our new GaN integrated circuits enable more ...
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