Abstract: In this work, the single-event burnout (SEB) performance and reasons of the proposed 900V SiC quasi-vertical double diffusion MOSFET with deepened drain (T-QVDMOSFET) are analyzed from the ...
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Abstract: In this study, the Quasi-Floating Channel-Based SiC MOSFET SPICE model with high modeling accuracy has been imported and simulated by using three simulation software. The advantages, ...
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