Abstract: A parallel split-gate trench MOSFET (PSGT-MOSFET) with a vertical GaN device has been introduced for improving the trade-off between specific on-resistance (Ron) and figures of merit in high ...
Abstract: This paper presents a self-regulating active gate driver (AGD) for Silicon Carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET). The proposed AGD aims to reduce switching ...
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