Rohm’s SCT40xxDLL series of SiC MOSFETs in TOLL packages delivers high power handling despite its compact, low-profile form ...

EliteSiC MOSFETs in the industry-standard T2PAK top-cool package for high-voltage automotive and industrial power conversion. The initial portfolio includes 650 V and 950 V silicon carbide MOSFET ...

ROHM Semiconductor recently began mass production of its SCT40xxDLL SiC MOSFET series in compact TOLL packages, delivering around 39% better thermal performance, a roughly 26% smaller footprint, and 2 ...

CREE has developed a new MOSFET that could be suitable for silicon-carbide-based string inverters above 10 kW in size. The U.S. manufacturer says switching losses are 20% lower with the new transistor ...

KAWASAKI, Japan, November 12, 2024--(BUSINESS WIRE)--Toshiba Electronic Devices & Storage Corporation ("Toshiba") has developed "X5M007E120," a bare die [1] 1200V silicon carbide (SiC) MOSFET for ...

Cree, Inc. and Delta Energy Systems announce a breakthrough in the photovoltaic (PV) inverter industry with the release of Delta's new generation of solar inverters, which utilize SiC power MOSFETs ...

SemiQ Inc. has unveiled its compact QSiC 1200-V SiC MOSFET modules in full-bridge configurations, the latest addition to its QSiC family. These modules deliver near zero switching loss, providing ...

Toshiba has developed a 2,200 V silicon carbide (SiC) MOSFET for inverters and energy storage systems, in order to help inverter manufacturers to reduce the size and weight of their products. Japanese ...

Alpha and Omega Semiconductor Limited (AOS) announced new AlphaMOS ( MOS) solutions that are optimized for emerging DC to AC power inverter applications. Alpha and Omega Semiconductor Limited (AOS) ...

An impressive peak efficiency of 99.1% is claimed for 50kW a solar inverter made with silicon carbide (SiC) mosfets and diodes from Cree, which claims it is “one-fifth the average size and weight of ...