Field-effect transistors (FETs) are the cornerstone of modern electronic devices, providing the essential functionality for digital logic, analog processing and power management.

Most transistors have three terminals, often labeled as emitter, base, and collector (in bipolar junction transistors) or source, gate, and drain (in field-effect transistors).

Most transistors have three terminals, often labeled as emitter, base, and collector (in bipolar junction transistors) or source, gate, and drain (in field-effect transistors).

Graphene Field Effect Transistors (GFETs) show promise for future electronics. They offer high-speed performance, enhanced sensitivity, and applications in biosensing, flexible devices, and more.

Organic field-effect transistors (OFETs) are a type of transistor that uses an organic semiconductor material as the active layer. Unlike conventional transistors that rely on inorganic semiconductors ...

In this paper, a Floating Gate Field Effect Transistor (FGFET), which has a structure similar to a floating gate memory cell transistor that has been widely used in the past and is highly applicable ...

Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET): Primarily uses electric fields to control current flow. It is the most common type of transistor in integrated circuits today due to ...

Beyond-silicon technology demands ultra-high-performance field-effect transistors (FETs). Transition metal dichalcogenides (TMDs) provide an ideal material platform, but the device performances ...

Exploring gate metal work function impact on nanoscale transistor performance for advanced electronics innovation and efficiency.

A technical paper titled “Laterally gated ferroelectric field effect transistor (LG-FeFET) using α-In2Se3 for stacked in-memory computing array” was published by researchers at Samsung Electronics and ...