A technical paper titled “Gate Drive Circuit Suitable for a GaN Gate Injection Transistor” was published by researchers at Nagoya University. “A GaN gate injection transistor (GIT) has great potential ...
Advanced Micro Devices has developed two sets of next-generation transistors using different approaches that produce higher levels of performance than conventional transistors, the company said at the ...
Researchers showed that narrowing the monolayer TMD nanoribbon transistor channel to about 35 nm increased the median ...
The transition from finFET technology to Gate-All-Around (GAA) technology helps to reduce transistor variability and resume channel length scaling. It also brings several new challenges in terms of ...
Artificial intelligence (AI) has become the workload that defines today’s semiconductor scaling. Whether in hyperscale data centers training foundation models or at the network edge executing ...
A vacuum channel transistor controls electrons at the cathode to suppress gate leakage, letting it work inside amplifiers and NAND and NOR logic gates. (Nanowerk News) A research team in China has ...
Researchers developed a dual-modulated vertical transistor that suppresses leakage at nanoscale channels and supports scalable 3D semiconductor integration. (Nanowerk News) Researchers at the Daegu ...
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